High/mixed-voltage analog and RF circuit techniques for nanoscale CMOS / Pui-In Mak, Rui Paulo Martins.
Material type:
TextSeries: Analog circuits and signal processing seriesPublication details: New York : Springer, c2012.Description: xvii, 145 p. : ill. ; 24 cmISBN: - 9781441995384 (alk. paper)
- 1441995382 (alk. paper)
- 9781441995391 (eISBN)
- 621.381528 MAK-P 23
- TK7871.99.M44 M25 2012
| Item type | Current library | Collection | Shelving location | Call number | Status | Date due | Barcode | Item holds |
|---|---|---|---|---|---|---|---|---|
Books
|
BITS Pilani Hyderabad | 621 | General Stack (For lending) | 621.381528 MAK-P (Browse shelf(Opens below)) | Available | 41479 |
Browsing BITS Pilani Hyderabad shelves, Shelving location: General Stack (For lending), Collection: 621 Close shelf browser (Hides shelf browser)
| No cover image available |
|
|
|
|
|
|
||
| 621.381528 KIS-L Electronic devices and circuits / | 621.381528 KIS-L Electronic circuit analysis / | 621.381528 KIS-L Electronic circuit analysis / | 621.381528 MAK-P High/mixed-voltage analog and RF circuit techniques for nanoscale CMOS / | 621.381528 SON-B Micro CMOS design / | 621.381528 SUB-V Electric drives : concepts and applications | 621.3815284 SAU-S Fundamentals of tunnel field-effect transistors / |
This book presents high-/mixed-voltage analog and radio frequency (RF) circuit techniques for developing low-cost multistandard wireless receivers in nm-length CMOS processes. Key benefits of high-/mixed-voltage RF and analog CMOS circuits are explained, state-of-the-art examples are studied, and circuit solutions before and after voltage-conscious design are compared. Three real design examples are included, which demonstrate the feasibility of high-/mixed-voltage circuit techniques.
* Provides a valuable summary and real case studies of the state-of-the-art in high-/mixed-voltage circuits and systems;
* Includes novel high-/mixed-voltage analog and RF circuit techniques – from concept to practice;
* Describes the first high-voltage-enabled mobile-TVRF front-end in 90nm CMOS and the first mixed-voltage full-band mobile-TV Receiver in 65nm CMOS;
* Demonstrates the feasibility of high-/mixed-voltage circuit techniques with real design examples.
Includes bibliographical references and index.
There are no comments on this title.